1 transistors publication date: march 2003 sjc00115bed 2sc2405, 2SC2406 silicon npn epitaxial planar type for low-frequency and low-noise amplification complementary to 2sa1034 and 2sa1035 features ? low noise voltage nv ? high forward current transfer ratio h fe ? mini type package, allowing downsizing of the equipment and auto- matic insertion through the tape packing and the magazine packing absolute maximum ratings t a = 25 c 0.40 +0.10 ?0.05 (0.65) 1.50 +0.25 ?0.05 2.8 +0.2 ?0.3 2 1 3 (0.95) (0.95) 1.9 0.1 2.90 +0.20 ?0.05 0.16 +0.10 ?0.06 0.4 0.2 5? 10? 0 to 0.1 1.1 +0.2 ?0.1 1.1 +0.3 ?0.1 parameter symbol rating unit collector-base voltage 2sc2405 v cbo 35 v (emitter open) 2SC2406 55 collector-emitter voltage 2sc2405 v ceo 35 v (base open) 2SC2406 55 emitter-base voltage (collector open) v ebo 5v collector current i c 50 ma peak collector current i cp 100 ma collector power dissipation p c 200 mw junction temperature t j 150 c storage temperature t stg ? 55 to + 150 c parameter symbol conditions min typ max unit collector-base voltage 2sc2405 v cbo i c = 10 a, i e = 035v (emitter open) 2SC2406 55 collector-emitter voltage 2sc2405 v ceo i c = 2 ma, i b = 035v (base open) 2SC2406 55 emitter-base voltage (collector open) v ebo i e = 10 a, i c = 05v base-emitter voltage v be v ce = 1 v, i c = 100 ma 0.7 1.0 v collector-base cutoff current (emitter open) i cbo v cb = 10 v, i e = 0 0.1 a collector-emitter cutoff current (base open) i ceo v ce = 10 v, i b = 01 a forward current transfer ratio * h fe v ce = 5 v, i c = 2 ma 180 700 ? collector-emitter saturation voltage v ce(sat) i c = 100 ma, i b = 10 ma 0.6 v transition frequency f t v cb = 5 v, i e = ? 2 ma, f = 200 mhz 200 mhz noise voltage nv v ce = 10 v, i c = 1 ma, g v = 80 db 110 mv r g = 100 k ? , function = flat electrical characteristics t a = 25 c 3 c rank r s t h fe 180 to 360 260 to 520 360 to 700 marking 2sc2405 sr ss st symbol 2SC2406 tr ts tt marking symbol: ? 2sc2405: s ? 2SC2406: t note) 1. measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors. 2. * : rank classification unit: mm 1: base 2: emitter 3: collector eiaj: sc-59 mini3-g1 package
2sc2405, 2SC2406 2 sjc00115bed i c ? v be v ce(sat) ? i c h fe ? i c p c ? t a i c ? v ce i c ? i b f t ? i e c ob ? v cb nv ? v ce 0 160 40 120 80 0 240 200 160 120 80 40 collector power dissipation p c ( mw ) ambient temperature t a ( c ) 012 8 4 0 160 120 40 100 140 80 20 60 t a = 25 c i b = 350 a 300 a 250 a 200 a 150 a 100 a 50 a collector current i c ( ma ) collector-emitter voltage v ce ( v ) 0 0.5 0.4 0.1 0.3 0.2 0 160 120 40 80 v ce = 5 v t a = 25 c base current i b ( ma ) collector current i c ( ma ) 0 2.0 1.6 0.4 1.2 0.8 0 120 100 80 60 40 20 v ce = 5 v t a = 75 c ? 25 c 25 c base-emitter voltage v be ( v ) collector current i c ( ma ) 0.1 1 10 100 0.01 0.1 1 10 100 i c / i b = 10 t a = 75 c 25 c ? 25 c collector-emitter saturation voltage v ce(sat) ( v ) collector current i c ( ma ) 0.1 1 10 100 0 1 000 800 600 400 200 v ce = 5 v t a = 75 c 25 c ? 25 c forward current transfer ratio h fe collector current i c ( ma ) ? 0.1 ? 1 ? 10 ? 100 0 500 400 300 200 100 v cb = 5 v t a = 25 c transition frequency f t ( mhz ) emitter current i e ( ma ) 0.1 1 10 100 0 10 8 6 4 2 collector output capacitance (common base, input open circuited) c ob (pf) i e = 0 f = 1 mhz t a = 25 c collector-base voltage v cb ( v ) 1 10 100 0 160 120 40 80 i c = 1 ma g v = 80 db function = flat 4.7 k ? r g = 100 k ? 22 k ? noise voltage nv ( mv ) collector-emitter voltage v ce ( v )
2sc2405, 2SC2406 3 sjc00115bed nv ? v ce nv ? i c nv ? i c nv ? r g nv ? r g 1 10 100 0 300 240 120 180 60 i c = 1 ma g v = 80 db function = riaa 4.7 k ? r g = 100 k ? 22 k ? noise voltage nv ( mv ) collector-emitter voltage v ce ( v ) 0.01 0.1 1 0 160 120 40 80 v ce = 10 v g v = 80 db function = flat 4.7 k ? r g = 100 k ? 22 k ? noise voltage nv ( mv ) collector current i c ( ma ) 0.01 0.1 1 0 300 240 120 180 60 v ce = 10 v g v = 80 db function = riaa 4.7 k ? r g = 100 k ? 22 k ? noise voltage nv ( mv ) collector current i c ( ma ) 1 10 100 0 160 120 40 80 v ce = 10 v g v = 80 db function = flat 0.1 ma i c = 1 ma 0.5 ma noise voltage nv ( mv ) signal source resistance r g ( k ? ) 1 10 100 0 300 240 120 180 60 v ce = 10 v g v = 80 db function = riaa 0.1 ma i c = 1 ma 0.5 ma noise voltage nv ( mv ) signal source resistance r g ( k ? )
request for your special attention and precautions in using the technical information and semiconductors described in this material (1) an export permit needs to be obtained from the competent authorities of the japanese government if any of the products or technologies described in this material and controlled under the "foreign exchange and foreign trade law" is to be exported or taken out of japan. (2) the technical information described in this material is limited to showing representative characteris- tics and applied circuits examples of the products. it neither warrants non-infringement of intellec- tual property right or any other rights owned by our company or a third party, nor grants any license. (3) we are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) the products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instru- ments and household appliances). consult our sales staff in advance for information on the following applications: ? special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. ? any applications other than the standard applications intended. (5) the products and product specifications described in this material are subject to change without notice for modification and/or improvement. at the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date product standards in advance to make sure that the latest specifications satisfy your requirements. (6) when designing your equipment, comply with the guaranteed values, in particular those of maxi- mum rating, the range of operating power supply voltage, and heat radiation characteristics. other- wise, we will not be liable for any defect which may arise later in your equipment. even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) when using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) this material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of matsushita electric industrial co., ltd. 2002 jul
|
